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SIR-563ST3F
Sensors
Infrared light emitting diode, top view type
SIR-563ST3F
The SIR-563ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous
efficiency and a 940nm peak wavelength suitable for silicon detectors. It has a wide radiation angle and is ideal for
compact optical control equipment.
Applications
Optical control equipment
Light source for remote control devices
Dimensions (Unit : mm)
φ 5.0 ± 0.2
Notes:
1. Unspecified tolerance
shall be ± 0.2.
2. Dimension in parenthesis are
Features
1) High efficiency, high output P O = 11.0mW (I F = 50mA).
2) Wide radiation angle θ 1/2 = 15deg.
4 ? 0.6
show for reference.
3) Emission spectrum well suited to silicon detectors.
( λ P = 940nm).
4) Good current-optical output linearity.
5) Long life, high reliability.
Absolute maximum ratings (Ta = 25 ° C)
2 ?
0.5
1
(2.5)
2
1 Anode
2 Cathode
Parameter
Forward current
Reverse voltage
Power dissipation
Pulse forward current
Operating temperature
Storage temperature
Symbol
I F
V R
P D
I FP ?
Topr
Tstg
Limits
100
5.0
160
0.5
? 25 to + 85
? 40 to + 85
Unit
mA
V
mW
A
° C
° C
? Pulse width = 0.1msec, duty ratio 1%
Rev.A
1/3
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